6n60c datasheet pdf 1n4001

Please note the new package dimensions arccording to pcn 2009. Silicon rectifiersdo41featureshigh efficiency, low vfhigh current capabilityhigh reliabilityhigh surge current capabilitylow power loss datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other semiconductors. This jedec device number series is available in the do41 axial package, and similar diodes are available in sma and melf. General purpose plastic rectifier vishay intertechnology. Glass and high temperature solder exemptions applied where applicable.

Germanium glass diode 1n601n60p taitron components. High current capability high surge current capability high reliability low reverse current datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other semiconductors. Description 2003 fairchild semiconductor corporation. Page 2 of 2 germanium glass diode 1n34a dimensions in how to contact us. The 1n400x or 1n4001 or 1n4000 series is a family of popular 1 a generalpurpose silicon rectifier diodes commonly used in ac adapters for common household appliances. Dimensions in inches and millimeters 1n4001 1n40071. May 19, 2016 15n60c3 datasheet 650v, mos power transistor infineon, spp15n60c3 datasheet, 15n60c3 pdf, 15n60c3 pinout, 15n60c3 manual, 15n60c3 schematic. General purpose plastic rectifier 1n4001 thru 1n4007 vishay general semiconductor features low forward voltage drop low leakage current high forward surge capability solder dip 275 c max.

Features and benefits mechanical data ordering information. C 1n4001 1n4007 general purpose rectifiers glass passivated absolute maximum ratings t a 25c unless otherwise noted these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Em518standard recovery rectifier diodesgleichrichterdioden mit standardsperrverzugifav 1 avf datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other semiconductors. The product status of devices described in this document may have changed since this document was published and may differ in case of multiple devices.

Datasheet pdf search site for electronic components and. Symbol 1n4001 1n4002 1n4003 1n4004 1n4005 1n4006 1n4007. Please note the new package dimensions arccording to pcn 20094a rev. Absolute maximum ratings and electrical characteristics. Oct 01, 2015 y2010dn datasheet pdf, y2010dn datasheet, y2010dn pdf, y2010dn pinout, y2010dn data, circuit, ic, manual, substitute, parts, schematic, reference. C1 1n4001 1n4007 general purpose rectifiers absolute maximum ratings t a 25c unless otherwise noted these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Its blocking voltage varies from 50 volts 1n4001 to volts 1n4007. Datasheet contains the design specifications for product development. The utc 4n60 is a high voltage mosfet and is designed to have better characteristics, such as fast switching time, low gate charge, low on. Semiconductor reserves the right to make changes at any time without notice in order to improve design. This data sheet provides information on subminiature size, axial lead mounted. Please consult the most recently issued document before initiating or completing a design.

A listing of on semiconductors productpatent coverage may be accessed at. K electrical characteristics tc 25c, unless otherwise specified parameter symbol test conditions min typ max unit. Id 20 a feature new revolutionary high voltage technology ultra low gate charge. Valid provided that device terminals are kept at ambient temperature. Hgtg12n60c3d data sheet december 2001 24a, 600v, ufs series nchannel igbt features with antiparallel hyperfast diode 24a, 600v at tc 25oc the hgtg12n60c3d is a mos gated high voltage switching typical fall time. General purpose plastic rectifier 1n4001 thru 1n4007 vishay. Jl 1 15 ordering information example preferred pn unit weight g preferred package code base quantity delivery mode uf4007e354 0. Vishay, disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching. Source absolute maximum ratings ta 25c item symbol ratings unit drain to source voltage vdss 300 v gate to. Spp11n60c3 mosfet nch 650v 11a to220ab infineon technologies datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. Discovering and getting the most relevant and suitable datasheet is as easy as few clicks.

Do15 1n4000 1n 4007 diode diode 1n 4002 1n4000 silicon diodes 1n4000 silicon diode 4004 1n4001 1n4007 by3 p5. View 1n4001 thru 1n4007 datasheet from vishay semiconductor diodes division at digikey. December 20 thermal characteristics fqp5n60c fqpf5n60c nchannel qfet mosfet 600 v, 4. Symbol 1n4001 1n4002 1n4003 1n4004 1n4005 1n4006 1n4007 unit. Panjit plastic silicon rectifiervoltage 50 to volts current 1. Diode gen purpose 50v 1a do41 online from elcodis, view and download 1n4001 pdf datasheet, diodes, rectifiers single specifications.

Ordering information note 4 device packaging shipping. Recent listings manufacturer directory get instant insight into any electronic component. Fqp6n60cfqpf6n60c 600v nchannel mosfet general description these nchannel enhancement mode power field effect transistors are produced using fairchilds proprietary, planar stripe, dmos technology. Axial lead solderable per milstd202, method 208 guaranteed. Specifications are subject to change without notice. General purpose plastic rectifier features low forward voltage drop low leakage current high forward surge capability. N absolute maximum ratings tc 25c, unless otherwise specified parameter symbol ratings unit drainsource voltage vdss 600 v gatesource voltage vgss 30 v avalanche current note 2 iar 5 a continuous drain current id 5 a pulsed drain current note 2 idm 20 a. Ul flammability classification rating 94v0 moisture sensitivity. H5n3011p silicon n channel mos fet high speed power switching rej03g03850200 rev. Nxp semiconductors product data sheet highspeed diodes 1n4148. Parameter symbol uf4001 uf4002 uf4003 uf4004 uf4005 uf4006 uf4007 unit typical thermal resistance r.